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100V 80A, 9mз Power Mosfet Transistor Qualified to AEC Q101 UIS Capability FDB3632

ChongMing Group (HK) Int'l Co., Ltd
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100V 80A, 9mз Power Mosfet Transistor Qualified to AEC Q101 UIS Capability FDB3632

Brand Name : FAIRCHILD

Model Number : FDB3632

Certification : Original Factory Pack

Place of Origin : Thailand

MOQ : 20pcs

Price : Negotiation

Payment Terms : T/T, Western Union,PayPal

Supply Ability : 5200PCS

Delivery Time : 1 Day

Packaging Details : please contact me for details

Description : N-Channel 100 V 12A (Ta), 80A (Tc) 310W (Tc) Surface Mount D²PAK (TO-263)

Drain to Source Voltage : 100 V

Gate to Source Voltage : ±20 V

Continuous (T 80 A C < 111oC, VGS = 10V) : 80 A

Continuous (Tamb = 25oC, VGS = 10V, RθJA = 43oC/W) : 12 A

Single Pulse Avalanche Energy (Note 1) : 393 mJ

Power dissipation : 310 W

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FDB3632 / FDP3632 / FDI3632

N-Channel PowerTrench® MOSFET 100V, 80A, 9mΩ

Features

• rDS(ON) = 7.5mΩ (Typ.), VGS = 10V, ID = 80A

• Qg(tot) = 84nC (Typ.), VGS = 10V

• Low Miller Charge

• Low QRR Body Diode

• UIS Capability (Single Pulse and Repetitive Pulse)

• Qualified to AEC Q101 Formerly developmental type 82784

Applications

• DC/DC converters and Off-Line UPS

• Distributed Power Architectures and VRMs

• Primary Switch for 24V and 48V Systems

• High Voltage Synchronous Rectifier

• Direct Injection / Diesel Injection Systems

• 42V Automotive Load Control

• Electronic Valve Train Systems


Product Tags:

power mosfet ic

      

multi emitter transistor

      
China 100V 80A, 9mз Power Mosfet Transistor Qualified to AEC Q101 UIS Capability FDB3632 wholesale

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